JPH0120549B2 - - Google Patents
Info
- Publication number
- JPH0120549B2 JPH0120549B2 JP56041525A JP4152581A JPH0120549B2 JP H0120549 B2 JPH0120549 B2 JP H0120549B2 JP 56041525 A JP56041525 A JP 56041525A JP 4152581 A JP4152581 A JP 4152581A JP H0120549 B2 JPH0120549 B2 JP H0120549B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- field
- guard
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56041525A JPS57155773A (en) | 1981-03-20 | 1981-03-20 | High pressure-resistant planar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56041525A JPS57155773A (en) | 1981-03-20 | 1981-03-20 | High pressure-resistant planar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57155773A JPS57155773A (en) | 1982-09-25 |
JPH0120549B2 true JPH0120549B2 (en]) | 1989-04-17 |
Family
ID=12610803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56041525A Granted JPS57155773A (en) | 1981-03-20 | 1981-03-20 | High pressure-resistant planar transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57155773A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58114434A (ja) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | 高耐圧半導体装置 |
JPS60153164A (ja) * | 1984-01-20 | 1985-08-12 | Nec Corp | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5760775B2 (en]) * | 1972-11-06 | 1982-12-21 | Hitachi Ltd | |
JPS5269275A (en) * | 1975-12-08 | 1977-06-08 | Hitachi Ltd | Transistor |
US4052725A (en) * | 1976-08-02 | 1977-10-04 | Rca Corporation | Cathode-ray tube screening exposure method |
-
1981
- 1981-03-20 JP JP56041525A patent/JPS57155773A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57155773A (en) | 1982-09-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6407413B1 (en) | Semiconductor device with guard ring and Zener diode layer thereover | |
CA1175953A (en) | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions | |
JPH0582070B2 (en]) | ||
CA1037160A (en) | Semiconductor device having at least one pn junction and channel stopper surrounded by a protective conducting layer | |
US5686750A (en) | Power semiconductor device having improved reverse recovery voltage | |
JPS6410105B2 (en]) | ||
GB2137811A (en) | High power mosfet with direct connection from connection pads to underlying silicon | |
JPH05136436A (ja) | 高耐圧半導体素子 | |
JP2003174169A (ja) | 半導体装置 | |
JP3189589B2 (ja) | 絶縁ゲート型半導体装置 | |
US5323041A (en) | High-breakdown-voltage semiconductor element | |
JP3590207B2 (ja) | Mosキャパシタ | |
US4430663A (en) | Prevention of surface channels in silicon semiconductor devices | |
JPH0120549B2 (en]) | ||
JP3297087B2 (ja) | 高耐圧半導体装置 | |
JPH09162399A (ja) | 半導体装置 | |
JPH08116049A (ja) | 絶縁ゲート型半導体装置 | |
JPH0516196B2 (en]) | ||
JP2932308B2 (ja) | 半導体装置 | |
US4739387A (en) | Amplifying gate thyristor having high gate sensitivity and high dv/dt rating | |
JPH10135489A (ja) | ダイオード | |
JP2629426B2 (ja) | 2重拡散型misfetを備えた半導体装置及びその製造方法 | |
JP2852557B2 (ja) | 半導体装置 | |
JP3217484B2 (ja) | 高耐圧半導体装置 | |
JPS6146062A (ja) | ラテラルトランジスタ半導体装置の製造方法 |