JPH0120549B2 - - Google Patents

Info

Publication number
JPH0120549B2
JPH0120549B2 JP56041525A JP4152581A JPH0120549B2 JP H0120549 B2 JPH0120549 B2 JP H0120549B2 JP 56041525 A JP56041525 A JP 56041525A JP 4152581 A JP4152581 A JP 4152581A JP H0120549 B2 JPH0120549 B2 JP H0120549B2
Authority
JP
Japan
Prior art keywords
region
electrode
field
guard
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56041525A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57155773A (en
Inventor
Tadahiko Tanaka
Norihiro Shigeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP56041525A priority Critical patent/JPS57155773A/ja
Publication of JPS57155773A publication Critical patent/JPS57155773A/ja
Publication of JPH0120549B2 publication Critical patent/JPH0120549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP56041525A 1981-03-20 1981-03-20 High pressure-resistant planar transistor Granted JPS57155773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041525A JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041525A JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Publications (2)

Publication Number Publication Date
JPS57155773A JPS57155773A (en) 1982-09-25
JPH0120549B2 true JPH0120549B2 (en]) 1989-04-17

Family

ID=12610803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041525A Granted JPS57155773A (en) 1981-03-20 1981-03-20 High pressure-resistant planar transistor

Country Status (1)

Country Link
JP (1) JPS57155773A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114434A (ja) * 1981-12-28 1983-07-07 Fujitsu Ltd 高耐圧半導体装置
JPS60153164A (ja) * 1984-01-20 1985-08-12 Nec Corp 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760775B2 (en]) * 1972-11-06 1982-12-21 Hitachi Ltd
JPS5269275A (en) * 1975-12-08 1977-06-08 Hitachi Ltd Transistor
US4052725A (en) * 1976-08-02 1977-10-04 Rca Corporation Cathode-ray tube screening exposure method

Also Published As

Publication number Publication date
JPS57155773A (en) 1982-09-25

Similar Documents

Publication Publication Date Title
US6407413B1 (en) Semiconductor device with guard ring and Zener diode layer thereover
CA1175953A (en) Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
JPH0582070B2 (en])
CA1037160A (en) Semiconductor device having at least one pn junction and channel stopper surrounded by a protective conducting layer
US5686750A (en) Power semiconductor device having improved reverse recovery voltage
JPS6410105B2 (en])
GB2137811A (en) High power mosfet with direct connection from connection pads to underlying silicon
JPH05136436A (ja) 高耐圧半導体素子
JP2003174169A (ja) 半導体装置
JP3189589B2 (ja) 絶縁ゲート型半導体装置
US5323041A (en) High-breakdown-voltage semiconductor element
JP3590207B2 (ja) Mosキャパシタ
US4430663A (en) Prevention of surface channels in silicon semiconductor devices
JPH0120549B2 (en])
JP3297087B2 (ja) 高耐圧半導体装置
JPH09162399A (ja) 半導体装置
JPH08116049A (ja) 絶縁ゲート型半導体装置
JPH0516196B2 (en])
JP2932308B2 (ja) 半導体装置
US4739387A (en) Amplifying gate thyristor having high gate sensitivity and high dv/dt rating
JPH10135489A (ja) ダイオード
JP2629426B2 (ja) 2重拡散型misfetを備えた半導体装置及びその製造方法
JP2852557B2 (ja) 半導体装置
JP3217484B2 (ja) 高耐圧半導体装置
JPS6146062A (ja) ラテラルトランジスタ半導体装置の製造方法